PART |
Description |
Maker |
BAS21LT1 |
CASE 318 08, STYLE 8 SOT 23 (TO 236AB)
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MOTOROLA[Motorola, Inc]
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BSV52LT1_D ON0231 |
CASE 318?8, STYLE 6 SOT-3 (TO-36AB) From old datasheet system
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ON Semi
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BAV70LT1 ON0132 |
CASE 318-08, STYLE 9 SOT-23 (TO-236AB) From old datasheet system Monolithic Dual Switching Diode Common Cathode
|
MOTOROLA[Motorola, Inc] ON Semiconductor
|
BAW56LT1 ON0137 BAW56 |
Monolithic Dual Switching Diode Common Anode CASE 318-08,STYLE12 SOT-23(TO-236AB) From old datasheet system
|
ON Semi MOTOROLA[Motorola, Inc]
|
BAV70WT1 ON0133 |
From old datasheet system CASE 419-02, STYLE 5 SC-70/SOT-323
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MOTOROLA[Motorola, Inc]
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2N5555 ON0063 |
CASE 29.04, STYLE 5 TO-92 (TO-226AA) CASE 29-4, STYLE 5TO-2 (TO-26AA) From old datasheet system JFET Switching
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MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
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BAV99WT1 BAV99RWT1 ON0136 BAV99 |
Diodes > JEDEC Standard & Euro Standard Diodes > Surface mounting type SC-70/SOT-323 Dual Series Switching Diode BAV99WT1 CASE 419-2, STYLE 9 SC-0/SOT-23 From old datasheet system
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ROHM ON Semi MOTOROLA[Motorola, Inc]
|
BC308C BC307C BC307B BC307 ON0143 |
Amplifier Transistors(PNP Silicon) 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 CASE 29-04, STYLE 17 TO-2 (TO-26AA) CASE 29-4, STYLE 17 TO-2 (TO-26AA) From old datasheet system
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ONSEMI[ON Semiconductor]
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X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt :SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage :SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2 RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm; Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8 IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
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http:// INTERSIL[Intersil Corporation] Intersil, Corp.
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PCK2001M_6 PCK2001M |
14.318-150 MHz IIC 1:10 clock buffer(14.318-150 MHz IIC 1:10时钟缓冲 14.318-150兆赫进口:10时钟缓冲器(14.318-150兆赫进口:10时钟缓冲器) From old datasheet system
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NXP Semiconductors N.V.
|
MBT3904DW1T1_D ON0484 |
CASE 419B-1, STYLE 1 From old datasheet system
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ON Semi
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